Iris Publishers-Modern Concepts in Material Science


Two-Dimensional MoS2 and Heterostructure Growth by Pulsed Laser Deposition


Material Science

Due to having zero band gap in two-dimensional graphene shifted the attention towards MoS2, WS2, and similar inorganic transition metal-based dichalcogenides. Most of them perform indirect to direct band gap crossover form bulk to monolayer make them a potential candidate for optoelectronic device applications [1-4]. MoS2 is stabilized in 2H semiconducting state, having a band gap of 1.9 eV for monolayer and 1.28 eV for bulk [5-6]. Thinnest transistor based on MoS2 have been already reported [2]. Based on unique excitons, spin and valley properties, MoS2 is considered for the next-generation platform for future electronics [7-9]. The metastable 1T phase is demanding due to metallicity and shows excellent hydrogen evolution activity [10-12]. This qualitative metal-semiconducting state in 1T-2H phase transition is promising for switchable device applications [13-14].

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