Iris Publishers - Modern Concepts in Material Science (MCMS)


Growth of Vertically Aligned InGaN Nanowires


Material Science

InGaN nanowires (NWs) have attracted a lot of research interest in the past decade. They contain both the intrinsic properties of InGaN materials, and some unique properties induced by the NW structures. This article reviews the growth methods to obtain InGaN NWs, with discussions on different epitaxy methods.

One-dimensional (1D) semiconducting materials have attracted considerable attention for future device applications, such as nanophotonic and nano electronic devices [1]. Group III-nitride nanowires (NWs), InGaN NW is of tunable bandgap (0.7–3.4 eV), high carrier mobility, and excellent optical absorption, which have demonstrated great potentials for the high-performance photodetectors, light-emitting diodes, and solar cells. The optoelectronic performance of InGaN NW devices is highly associated with the NW morphologies [2]. For instance, poorly defined morphology such as a conical shape may cause a significant Fermi level fluctuation along the NW axial direction, leading to undesirable properties of the NWs as well as the poor performance of the related devices. Therefore, the high quality and vertically aligned InGaN NWs is one of the key points for the device applications of the InGaN NWs. The InGaN NW growth methods are reviewed briefly in the subsequent sections.

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