Iris Publishers - Modern Concepts in Material Science (MCMS)
Metal Insulator Transition in Vanadium
Dioxide Hydrated by Means of the Plasma-Immersion Ion Implantation Method
Authorized
by Pergament A
In
the work, we explore the modification of the structure of vanadium dioxide
films, as well as the metal-semiconductor phase transition in them, when
hydrated by the method of plasma-immersion ion implantation. Based on a
detailed X-ray analysis and the Raman spectra of the initial and hydrated
films, it is shown that the plasma-ion modification of the transition and the
metallization of vanadium dioxide (at a hydrogen concentration above 10at. %)
are most likely associated with electron-correlation effects amplified by
hydrogen implantation and an increase in the free charge carrier density in the
material. Meanwhile, the structural changes at the transition practically do
not manifest themselves: the hydrated metallic vanadium dioxide remains in the
monoclinic phase. The results of plasma-immersion implantation are compared
with experiments where other methods of hydration of vanadium dioxide are
applied.
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